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Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning
Language: en
Pages: 306
Dissertation Abstracts International
Language: en
Pages: 806
Authors:
Categories: Dissertations, Academic
Type: BOOK - Published: 2004 - Publisher:

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Electrical & Electronics Abstracts
Language: en
Pages: 2240
Authors:
Categories: Electrical engineering
Type: BOOK - Published: 1997 - Publisher:

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Dilute Nitride Semiconductors
Language: en
Pages: 648
Authors: Mohamed Henini
Categories: Technology & Engineering
Type: BOOK - Published: 2004-12-15 - Publisher: Elsevier

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- This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives
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