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Physical Defects and Degradation Mechanisms of GaN-based Electronic Devices Explored by Transmission Electron Microscopy
Language: en
Pages: 310
Authors: Andrew Charles Lang
Categories: Electron energy loss spectroscopy
Type: BOOK - Published: 2018 - Publisher:

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The maturation of new semiconductor and device technology is dependent upon our understanding of device reliability. Silicon has had the benefit of more than 50
Physical Degradation and Preparation for In-situ Microscopy of AlGaN/GaN-based HEMTs
Language: en
Pages: 126
Authors: Andrew Charles Lang
Categories: Materials science
Type: BOOK - Published: 2013 - Publisher:

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The most promising class of materials poised to take over the future of microwave power transistors are wide band gap semiconductors among which GaN is most exc
Power GaN Devices
Language: en
Pages: 383
Authors: Matteo Meneghini
Categories: Technology & Engineering
Type: BOOK - Published: 2016-09-08 - Publisher: Springer

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This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most a
Transmission Electron Microscopy
Language: en
Pages: 543
Authors: C. Barry Carter
Categories: Technology & Engineering
Type: BOOK - Published: 2016-08-24 - Publisher: Springer

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This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussio
GaN and Related Materials
Language: en
Pages: 556
Authors: Stephen J. Pearton
Categories: Science
Type: BOOK - Published: 2021-10-08 - Publisher: CRC Press

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Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the
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