Book excerpt: Computational fluid dynamics (CFD) modeling is used to simulate chemical vapor deposition (CVD) of silicon carbide (SiC), a wide-band gap semiconductor with a high breakdown field. The effects on SiC CVD of precursor concentration, flow rate, temperature, pressure, heat transfer and reactor geometry are investigated. Also demonstrates the possibilty of doping SiC with solid source vanadium during CVD growth of SiC epitaxial layers.